| VGS (ú) (Max) @ Id: | 900mV @ 250µA |
|---|---|
| VGS (Uasmhéid): | -6V |
| teicneolaíocht: | MOSFET (Metal Oxide) |
| Soláthraí Pacáiste Gléas: | 4-DSBGA (1x1) |
| Sraith: | NexFET™ |
| Rds On (Max) @ Id, VGS: | 53 mOhm @ 500mA, 4.5V |
| Power dhiomailt (Max): | 1W (Ta) |
| Pacáistiú: | Tape & Reel (TR) |
| Pacáiste / Cás: | 4-UFBGA, DSBGA |
| Teocht Oibriúcháin: | -55°C ~ 150°C (TJ) |
| gléasta Cineál: | Surface Mount |
| Ionchur toilleas (SFSanna) (Uasmhéid) @ VDS: | 512pF @ 6V |
| Geata Muirear (QG) (Uasmhéid) @ VGS: | 3.8nC @ 4.5V |
| Cineál FET: | P-Channel |
| FET Gné: | - |
| Drive Voltage (Max Rds Ar, Min Rds On): | 1.5V, 4.5V |
| Taosc le Foinse Voltage (RDS): | 12V |
| Atá ann faoi láthair - Leanúnach Drain (Id) @ 25 ° C: | 2.2A (Ta) |
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